International Journal of Innovative Research in Computer and Communication Engineering
ISSN Approved Journal | Impact factor: 8.771 | ESTD: 2013 | Follows UGC CARE Journal Norms and Guidelines
| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | High Impact Factor 8.771 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing in all Major Database & Metadata, Citation Generator | Digital Object Identifier (DOI) |
| papers |
Hybrid Silicon Substrate FinFET-Metal Insulator Metal Design for the Non-Volatile SRAM Cell PROF RADHIKA PRIYA Y R, RENUKA GURAV, PANKAJA G R, SPOORTHI S GOVINAGIDAD, DASARI SRILATHA J Assistant Professor, Dept. of ECE., Bapuji Institute of Engineering and Technology, Davanagere, Karnataka, India UG Student, Dept. of ECE., Bapuji Institute of Engineering and Technology, Davanagere, Karnataka, India DOI: 10.15680/IJIRCCE.2025.1308016 |
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| pdf/gQjIAUgchZbU6Q7NclQ2bD8VhMauzwDChkxmnkMV.pdf |
