International Journal of Innovative Research in Computer and Communication Engineering
ISSN Approved Journal | Impact factor: 8.771 | ESTD: 2013 | Follows UGC CARE Journal Norms and Guidelines
| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | High Impact Factor 8.771 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing in all Major Database & Metadata, Citation Generator | Digital Object Identifier (DOI) |
| papers | Capacitance Modeling of AlN dielectric for AlGaN HEMT (MIS-HEMT) Device with two SubbandsS.BASKARAN, P.KALAIVANI, M.NAVEENKUMARProfessor, Department of Electronics and Communication Engineering, SKP Engineering College Tiruvannamalai, Tamilnadu, India Assistant Professor, Department of Electronics and Communication Engineering, SKP Engineering College Tiruvannamalai, Tamilnadu, India |
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| pdf/mIeBJjRJIFMC5ifjB8nEKxfrsjsRTsOKQOwAnrKZ.pdf |
