International Journal of Innovative Research in Computer and Communication Engineering
ISSN Approved Journal | Impact factor: 8.771 | ESTD: 2013 | Follows UGC CARE Journal Norms and Guidelines
| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | High Impact Factor 8.771 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing in all Major Database & Metadata, Citation Generator | Digital Object Identifier (DOI) |
| papers | One Bit-Line Multi-Threshold SRAM Cell With High Read StabilityPRANGYA PARIMITA NANDA , KANAN BALA RAY, SUSHREE SANGITA DASPG Student, School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha, India Asst. Prof., School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha, India PG Student, School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha, India |
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| pdf/azSAE0fqNjBQ8lp4NCrXIPAX5CnxY90NAy3glJDh.pdf |
