International Journal of Innovative Research in Computer and Communication Engineering
ISSN Approved Journal | Impact factor: 8.771 | ESTD: 2013 | Follows UGC CARE Journal Norms and Guidelines
| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | High Impact Factor 8.771 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing in all Major Database & Metadata, Citation Generator | Digital Object Identifier (DOI) |
| papers | Effect of Buffer Mole Fraction on AlGaN/GaN Field-Plated HEMT on Threshold, Device Leakage and FrequencyS.Baskaran, A.Nithya, P.PalaniProfessor, Department of Electronics and Communicaton Engineering, SKP Engineering College Tiruvannamalai, Tamilnadu, India Assistant Professor, Department of Electronics and Communicaton Engineering, SKP Engineering College Tiruvannamalai, Tamilnadu, India |
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| pdf/ENYYrI5gPATXXdIyQJsi8qGsEGDvjd92tupgRAAb.pdf |
