International Journal of Innovative Research in Computer and Communication Engineering
ISSN Approved Journal | Impact factor: 8.771 | ESTD: 2013 | Follows UGC CARE Journal Norms and Guidelines
| Monthly, Peer-Reviewed, Refereed, Scholarly, Multidisciplinary and Open Access Journal | High Impact Factor 8.771 (Calculated by Google Scholar and Semantic Scholar | AI-Powered Research Tool | Indexing in all Major Database & Metadata, Citation Generator | Digital Object Identifier (DOI) |
| TITLE | Characteristics of AlGaN/GaN HEMT with P-Type GaN Gate and AlGaN BufferV.Madhurima, S.K.Gayaz, P.MadhaviAssociate Professor, Department of ECE, S V College of Engineering, Tirupati, A.P, India |
|---|---|
| pdf/RGFeLTRqWu6xWKBG6CpzPxsIPzlL6KpmxKTd7HEM.pdf |
